Micron’s world premiere of 176-layer UFS 3.1 flash memory will be equipped on Honor Magic 3

On the morning of July 30, Micron announced that it has begun mass shipments of the world’s first UFS 3.1 flash memory product based on 176-layer discrete technology, mainly for 5G high-end mobile phones.

In terms of performance, the official said that the sequential write and random read performance has been improved by 75% compared with the previous generation’s 96-layer stacked product. It only takes 9.6 seconds to download a 2 hour, 14GB 4K movie, and the converted transmission speed is close to 1.5GB. /s.


In a mixed workload scenario, the performance is increased by 15%, and the response delay is reduced by about 10%, which can make the phone start and switch applications faster and ensure fluency.

In terms of capacity, 128GB, 256GB and 512GB are available.

Speaking of which, I am afraid that some users are worried about reliability. According to Micron, the total number of bytes written on the 176-layer is twice that of the previous 96-layer product, which means that it can store twice the total amount of data before without compromising the reliability of the device. Even heavy mobile phone users will find that the service life of smartphones has been greatly increased.


It is reported that the Honor Magic 3, which is scheduled to be released on August 12, will be the first to be equipped with Micron’s 176-layer UFS 3.1 flash memory.